The influence of P+, B+, and N+ ion implantation on the luminescence properties of the SiO2: nc-Si system

Author: Tetelbaum D.   Gorshkov O.   Burdov V.   Trushin S.   Mikhaylov A.   Gaponova D.   Morozov S.   Kovalev A.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7834

Source: Physics of the Solid State, Vol.46, Iss.1, 2004-01, pp. : 17-21

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