Related content

Spectral and current-voltage characteristics of Si-Si_1−x Ge_x heterostructures grown by liquid phase epitaxy

By Saidov A.   Kutlimratov A.   Sapaev B.   Davlatov U.  

Technical Physics Letters, Vol. 27, Iss. 4, 2001-04 ,pp. : 319-322

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Si_1−x Ge_x/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure

By Vostokov N.   Drozdov Yu.   Krasil’nik Z.   Kuznetsov O.   Novikov A.   Perevoshchikov V.   Shaleev M.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 42-45

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Composition and elastic stresses in multilayer structures with Si_1−x Ge_x nanoislands

By Valakh M.   Dzhagan V.   Lytvyn P.   Yukhymchuk V.   Krasil’nik Z.   Novikov A.   Lobanov D.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 85-88

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Growth of perfect-crystal Si-Si_1−x Ge_x-(Ge₂)_1−x (InP)_x structures from the liquid phase

By Saidov A.   Koshchanov É.   Razzakov A.   Ismailov Sh.  

Technical Physics Letters, Vol. 25, Iss. 12, 1999-12 ,pp. : 986-987

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Optimization of the plastic relaxation of misfit stresses in Ge_xSi_1−x /Si(001) (x≤0.61) heterostructures

By Bolkhovityanov Yu.   Deryabin A.   Gutakovskii A.   Revenko M.   Sokolov L.  

Technical Physics Letters, Vol. 30, Iss. 1, 2004-01 ,pp. : 68-70

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite