Heteroepitaxy of erbium-doped silicon layers on sapphire substrates

Author： Shengurov V.   Pavlov D.   Svetlov S.   Chalkov V.   Shilyaev P.   Stepikhova M.   Krasil’nikova L.   Drozdov Yu.   Krasil’nik Z.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.47, Iss.1, 2005-01, pp. : 89-92

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Luminescence of erbium-doped porous silicon

By Bondarenko V.   Vorozov N.   Dolgii L.   Dorofeev A.   Kazyuchits N.   Leshok A.   Troyanova G.  

Technical Physics Letters, Vol. 23, Iss. 1, 1997-01 ,pp. : 3-4

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy

By Shengurov V.   Svetlov S.   Chalkov V.   Andreev B.   Krasil’nik Z.   Kryzhkov D.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 101-103

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of heat treatment on the properties of erbium-doped silicon

By Vlasov S.   Nazyrov D.   Iminov A.   Khudaiberdiev S.  

Technical Physics Letters, Vol. 26, Iss. 4, 2000-04 ,pp. : 328-329

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Study of erbium-doped silicon nanocrystals in silica

By  

Journal of Physics: Conference Series , Vol. 241, Iss. 1, 2010-07 ,pp. : 409-412

IOP Publishing

Access to resources Recommend Favorite

Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures

By Andreev B.   Krasil’nik Z.   Kryzhkov D.   Yablonskii A.   Kuznetsov V.   Gregorkiewicz T.   Klik M.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 97-100

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite