Heteroepitaxy of Ge x Si1 − x (x ∼ 0.4–0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction

Author: Bolkhovityanov Yu.   Deryabin A.   Gutakovskii A.   Sokolov L.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7834

Source: Physics of the Solid State, Vol.52, Iss.1, 2010-01, pp. : 32-36

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