Experimental and theoretical investigation of formation of the oxygen-containing precipitate-dislocation loop system in silicon

Author： Goldstein R. Mezhennyi M. Mil’vidskii M. Reznik V. Ustinov K. Shushpannikov P.

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.53, Iss.3, 2011-03, pp. : 527-538

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

X-ray diffraction investigation into the specific features of the growth kinetics of oxygen-containing precipitates in Czochralski-grown silicon crystals

By Novikov N. Tesel’ko P. Mikhalyuk O.

Physics of the Solid State, Vol. 49, Iss. 2, 2007-02 ,pp. : 215-219

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Energy transfer under photoexcitation of porous silicon-fullerene nanocomposite in oxygen-containing ambient

By Pikulev V. Kuznetsov S. Saren A. Gardin Yu. Gurtov V.

Technical Physics Letters, Vol. 32, Iss. 2, 2006-02 ,pp. : 129-131

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Oxygen-induced modification of dislocation luminescence centers in silicon

By Steinman E.

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 5-8

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Experimental and theoretical investigation into the effect of the electron velocity distribution on chaotic oscillations in an electron beam under virtual cathode formation conditions

By Kalinin Yu. Hramov A.

Technical Physics, Vol. 51, Iss. 5, 2006-05 ,pp. : 558-566

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Acoustic emission in dislocation-containing silicon exposed to current and thermal influences

By Orlov A. Skvortsov A. Frolov V.

Technical Physics Letters, Vol. 25, Iss. 2, 1999-02 ,pp. : 95-96

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite