Investigation of gallium arsenide single crystals with various crystallographic orientations, after implantation of silicon ions and pulsed photon annealing

Author： Vasil’kovskii S.   Konakova R.   Tkhorik Yu.   Dukhnovskii M.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7842

Source： Technical Physics, Vol.44, Iss.5, 1999-05, pp. : 548-552

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