Formation of resistive properties of two-phase semiconductor-metal systems based on FeSi1+x with small deviations from stoichiometry

Author: Povzner A.   Andreeva A.   Sachkov I.   Kryuk V.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7842

Source: Technical Physics, Vol.46, Iss.8, 2001-08, pp. : 1037-1039

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