Current-voltage characteristic and parameters of the current filament region of an amorphous gallium telluride-crystalline silicon barrier negistor structure

Author： Čhesnys A.   Karpinskas S.   Urbelis A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7842

Source： Technical Physics, Vol.47, Iss.10, 2002-10, pp. : 1263-1267

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