Electrical performance of CdHgTe photodiodes for 1.30 and 1.55 μm

Author： Kosyachenko L.   Kulchynsky V.   Paranchych S.   Sklyarchuk V.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7842

Source： Technical Physics, Vol.51, Iss.9, 2006-09, pp. : 1197-1202

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Electrical performance of hgInTe surface-barrier photodiodes

By Kosyachenko L.   Paranchich Yu.   Makogonenko V.   Sklyarchuk V.   Sklyarchuk E.   German I.  

Technical Physics, Vol. 48, Iss. 5, 2003-05 ,pp. : 647-650

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Les photodiodes à avalanche Hg0,4Cd0,6Te à λ = 1,55 μm. Bruit près de la résonance due au couplage spin-orbite

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 4, 1987-04 ,pp. : 227-233

Edp Sciences

Access to resources Recommend Favorite

Photoluminescence of CdHgTe based nanoheterostructures

By Mynbaev K.   Bazhenov N.   Ivanov-Omski V.   Shilyaev A.   Varavin V.   Mikhailov N.   Dvoretsky S.   Sidorov Yu.  

Technical Physics Letters, Vol. 36, Iss. 12, 2010-12 ,pp. : 1099-1102

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

1.5–1.8 μm photoluminescence of MBE-grown HgCdTe films

By Ivanov-Omski V.   Bazhenov N.   Mynbaev K.   Smirnov V.   Varavin V.   Babenko A.   Ikusov D.   Sidorov G.  

Technical Physics Letters, Vol. 33, Iss. 6, 2007-06 ,pp. : 471-473

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Photoluminescence of CdHgTe epilayers grown on silicon substrates

By Mynbaev K.   Bazhenov N.   Ivanov-Omski V.   Smirnov V.   Yakushev M.   Sorochkin A.   Varavin V.   Mikhailov N.   Sidorov G.   Dvoretsky S.   Sidorov Yu.  

Technical Physics Letters, Vol. 36, Iss. 12, 2010-12 ,pp. : 1085-1088

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite