Crystallization of β-SiC in thin SiC x layers (x = 0.03−1.40) synthesized by multiple implantation of carbon ions into silicon

Author: Beisenkhanov N.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7842

Source: Technical Physics, Vol.56, Iss.2, 2011-02, pp. : 274-281

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