Increasing the concentration of recombination impurities as a means to suppress the amplification saturation effect in intrinsic threshold photoresistors with extracting contacts and impurity recombination of photo-generated carriers

Author： Kholodnov V.   Drugova A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.23, Iss.1, 1997-01, pp. : 82-84

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