Related content

Long-wavelength photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures

By Astakhova A.   Zhurtanov B.   Imenkov A.   Mikhailova M.   Sipovskaya M.   Stoyanov N.   Yakovlev Yu.  

Technical Physics Letters, Vol. 33, Iss. 1, 2007-01 ,pp. : 11-13

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Thermal and Auger processes in p-n junctions based on GaInAs/InAs and InAsSbP/InAs heterostructures

By Sukach G.   Oleksenko P.   Bogoslovskaya A.   Bilinets Yu.   Kabatsii V.  

Technical Physics, Vol. 42, Iss. 9, 1997-09 ,pp. : 1044-1047

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

By Aidaraliev M.   Zotova N.   Karandashev S.   Matveev B.   Remenny M.   Stus’ N.   Talalakin G.  

Technical Physics Letters, Vol. 24, Iss. 6, 1998-06 ,pp. : 472-474

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Growth and photoelectric properties of graded-gap Si-(Si₂)_1−x (GaP)_x heterostructures

By Sapaev B.   Saidov A.   Dadamukhamedov S.  

Technical Physics, Vol. 49, Iss. 9, 2004-09 ,pp. : 1243-1246

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Mechanisms of photocurrent amplification in isotypic n ⁺-GaSb-n ⁰-GaInAsSb-n ⁺-GaAlAsSb heterostructures

By Slobodchikov S.   Salikhov Kh.   Yakovlev Yu.   Samorukov B.  

Technical Physics Letters, Vol. 24, Iss. 5, 1998-05 ,pp. : 386-387

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite