Spectra of polycrystalline and single-crystal silicon for solar cells measured by deep-level transient spectroscopy

Author： Kikkarin S. Mukashev B. Tamendarov M. Tokmoldin S.

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.23, Iss.2, 1997-02, pp. : 147-148

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors

Journal de Physique III, Vol. 7, Iss. 7, 1997-07 ,pp. : 1389-1398

Edp Sciences

Access to resources Recommend Favorite

Deep-level optical spectroscopy of ZnTe

By Kvit A. Medvedev S. Klevkov Yu. Zaitsev V. Onishchenko E. Klokov A. Bagaev V. Tsikunov A. Perestoronin A. Yakimov M.

Physics of the Solid State, Vol. 40, Iss. 6, 1998-06 ,pp. : 924-929

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “a statistical method of deep-level transient spectroscopy in semiconductors

By Yarykin N.

Semiconductors, Vol. 45, Iss. 6, 2011-06 ,pp. : 832-834

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

3D-Modelling of polycrystalline silicon solar cells

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. : 677-685

Edp Sciences

Access to resources Recommend Favorite

Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy

Journal of Physics D: Applied Physics, Vol. 48, Iss. 7, 2015-02 ,pp. : 75303-75308

IOP Publishing

Access to resources Recommend Favorite