On the degree to which the wide-gap part of a p-n heterojunction influences the breakdown field and the carrier multiplication coefficients

Author： Kholodnov V. Kurochkin N.

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.24, Iss.9, 1998-09, pp. : 668-670

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