Related content

Electrical characteristics of (p)3C-SiC-(n)6H-SiC heterojunctions

By Lebedev A.   Strel’chuk A.   Davydov D.   Savkina N.   Kuznetsov A.   Sorokin L.  

Technical Physics Letters, Vol. 28, Iss. 9, 2002-09 ,pp. : 792-794

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Investigation of the p ⁻-3C-SiC/n ⁺-6H-SiC heterostructures with modulated doping

By Lebedev A.   Strel’chuk A.   Savkina N.   Bogdanova E.   Tregubova A.   Kuznetsov A.   Sorokin L.  

Technical Physics Letters, Vol. 28, Iss. 12, 2002-12 ,pp. : 1011-1014

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures

By Lebedev A.   Zamorianskaya M.   Davydov S.   Kirilenko D.   Lebedev S.   Sorokin L.   Shustov D.   Scheglov M.  

Semiconductors, Vol. 47, Iss. 11, 2013-11 ,pp. : 1539-1543

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Studying edge luminescence of n-3C-SiC epilayers grown on 6H-SiC substrates

By Lebedev A.   Abramov P.   Bogdanova E.   Lebedev S.   Nel’son D.   Razbirin B.   Tregubova A.  

Technical Physics Letters, Vol. 36, Iss. 6, 2010-06 ,pp. : 504-506

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Microwave switches based on 4H-SiC p-i-n diodes

By Bludov A.   Boltovets N.   Vasilevskii K.   Zorenko A.   Zekentes K.   Krivutsa V.   Kritskaya T.   Lebedev A.  

Technical Physics Letters, Vol. 30, Iss. 2, 2004-02 ,pp. : 123-125

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite