Features of the structure of a porous silicon carbide layer obtained by electrochemical etching of a 6H-SiC substrate

Author： Sorokin L. Savkina N. Shuman V. Lebedev A. Mosina G. Hutchison G.

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.28, Iss.11, 2002-11, pp. : 935-938

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