Effect of the oxide thickness on the operation speed of a field-effect transistor in terms of the carrier tunneling rate

Author： Grado-Caffaro M.   Grado-Caffaro M.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.28, Iss.12, 2002-12, pp. : 1030-1032

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