A Difference in the change of parameters of silicon-on-sapphire structures upon X-ray irradiation from the sides of epitaxial layer and substrate

Author： Kiselev A.   Perevoshchikov V.   Skupov V.   Filatov D.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.29, Iss.12, 2003-12, pp. : 971-973

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