Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

Author： Vinokurov D.   Zorina S.   Kapitonov V.   Nikolaev D.   Stankevich A.   Shamakhov V.   Tarasov I.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.32, Iss.4, 2006-04, pp. : 299-301

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Mechanisms of a negative differential conductivity in a short-channel In0.52Ga0.48As/In0.53Al0.47As HEMT

By  

Journal of Physics: Conference Series , Vol. 193, Iss. 1, 2009-11 ,pp. : 80-83

IOP Publishing

Access to resources Recommend Favorite

NEGATIVE DIFFERENTIAL RESISTANCE OF In0.53Ga0.47As/In0.52Al0.48As RESONANT TUNNELING BARRIERS GROWN BY MBE

By  

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-453-C5-456

Edp Sciences

Access to resources Recommend Favorite

Observation of confined states in anIn0.53Ga0.47As/In0.52 Al0.48Asmulti-quantum wells structure by quantum confined Stark effects

By Tanaka K.   Murata T.   Kotera N.   Nakamura H.  

Superlattices and Microstructures, Vol. 29, Iss. 2, 2001-02 ,pp. : 91-98

Academic Press

Access to resources Recommend Favorite

Photoluminescence of heterostructures with highly strained Ga0.76In0.24As quantum wells separated by GaAsyP1−y compensating barriers

By Shamakhov V.   Vinokurov D.   Stankevich A.   Kapitonov V.   Zorina S.   Nikolaev D.   Murashova A.   Bondarev A.   Tarasov I.  

Technical Physics Letters, Vol. 31, Iss. 12, 2005-12 ,pp. : 993-996

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Low temperature electron magnetotransport in InxGa1-xAs/In0.52Al0.48As quantum wells with high electron density

By  

Journal of Physics: Conference Series , Vol. 150, Iss. 2, 2009-02 ,pp. : 375-378

IOP Publishing

Access to resources Recommend Favorite