Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique

Author: Kukushkin S.   Osipov A.   Vcherashnii D.   Obukhov S.   Feoktistov N.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7850

Source: Technical Physics Letters, Vol.39, Iss.5, 2013-05, pp. : 488-491

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