Observation on photoluminescence evolution in 300 keV self-ion implanted and annealed silicon

Author: Yang Y   Bao J M   Jin Y X   Li L   Yang J   Wang C  

Publisher: Maney Publishing

ISSN: 1066-7857

Source: Materials Technology: Advanced Performance Materials, Vol.27, Iss.1, 2012-02, pp. : 130-132

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next