Integration of High‐k Oxide on MoS2 by Using Ozone Pretreatment for High‐Performance MoS2 Top‐Gated Transistor with Thickness‐Dependent Carrier Scattering Investigation

Publisher: John Wiley & Sons Inc

E-ISSN: 1613-6829|11|44|5932-5938

ISSN: 1613-6810

Source: SMALL, Vol.11, Iss.44, 2015-11, pp. : 5932-5938

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Abstract