Chapter
1.2.3. Elastic scattering
1.3. Channeling, shadowing and blocking
1.4. 1D layers: limits to depth resolution
1.5. 2D and 3D objects: aspects of lateral resolution
1.5.2. Simulation of nanostructures
2.
Instruments and Methods
2.1.2. Detectors and data acquisition
2.2.3. Narrow resonance profiling
3.1. Example of resonances/light element profiling
3.1.2. Channeling study of the SiO2/Si interface
3.1.3. Narrow resonance profiling and stable isotopic tracing
studies of the oxidation of silicon
3.1.4. Thermal oxidation of silicon carbide
3.1.5. Diffusion and reaction of CO in thermal SiO2: transport,
exchange and SiC nanocrystal growth
3.2. Quantitative analysis/heavy element profiling
3.2.1. RBS quantitative analysis of quantum dots and quantum wells
3.2.2. CMOS transistors and the race for miniaturization
3.3. Examples of HR-ERD analysis
3.3.2. HRBS/HR-ERD comparison
3.3.3. HR-ERD profiles of Al2O3/TiO2 nanolaminates
3.4. Channeling/defect profiling
3.4.2. Arsenic implant in ultra-shallow-junctions
3.5. Blocking/strain profiling
3.6. 3D MEIS/real space structural analysis
3.6.1. Electrostatic analyzer method
3.6.2. Time-of-flight method
4.
The Place of NanoIBA in
the Characterization Forest
4.2. Scope of physical and chemical characterization
4.2.1. Targeted information by material characterization
4.2.2. Basic principle and instrumentation of material characterization
4.3. Ion-based characterization techniques overview
4.4. Ion-mass-spectroscopy-based characterization techniques versus IBA
4.4.1. Secondary ion mass spectrometry
4.4.2. Atom probe tomography
4.5. Other characterization techniques versus IBA
4.5.1. X-ray photoelectron spectroscopy
4.5.3. X-ray absorption fine structure
4.5.4. Analytical electron microscopy
4.6. Emerging ion-beam-based techniques
4.6.1. Low energy ion scattering
4.6.3. Scanning helium ion microscopy
4.6.4. Grazing incidence fast atoms diffraction
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