Description
This book gives a comprehensive description of the physics and applications of resonant tunnelling diodes. The opening chapters of the book set out the basic principles of coherent tunnelling theory. The effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution and intrinsic bistabilities are then described in detail. The applications of RTDs, such as in high-frequency signal generation and multi-valued data storage, are also reviewed. The book closes with a chapter devoted to the more recent field of resonant tunnelling through laterally confined zero-dimensional structures. Covering all the key theoretical and experimental aspects of this stimulating area of research, the book will be of great value to graduate students of quantum transport physics and device engineering, as well as to researchers in both these fields.
Chapter
2.2 Theory of global coherent resonant tunnelling
2.2.1 Transfer matrix theory of transmission probability
2.2.2 Self-consistent calculations - introduction of space charge build-up
2.2.3 Transfer Hamiltonian model
2.4 Quantised emitter states and 2D-2D resonant tunnelling
2.5 Resonant tunnelling in double-well heterostructures
2.6 Phase-coherence breaking scattering and sequential tunneling
3 Scattering-assisted resonant tunnelling
3.1 LO-phonon-emission-assisted resonant tunnelling
3.1.1 Phonon-assisted tunnelling and postresonance peak
3.1.2 Theoretical investigations of phonon-assisted tunnelling
3.1.3 Magnetotunnelling measurements in the valley-current regime
3.2 Resonant tunnelling through X-point states
3.2.1 Resonant T-X-intervalley tunnelling
3.2.2 Lateral momentum non-conserving intervalley tunnelling
3.3 Effects of impurity scattering in RTDs
4 Femtosecond dynamics and non-equilibrium distribution of electrons in resonant tunnelling diodes
4.1 Non-equilibrium electron distribution in RTDs
4.2 Theory of dissipative quantum transport in RTDs
4.2.1 The time-dependent statistical density matrix and the Wigner distribution function
4.2.2 Femtosecond electron dynamics in RTDs
4.3 Space charge build-up in the quantum well, and intrinsic current bistability of RTDs
4.3.1 Numerical analysis of intrinsic current bistability
4.3.2 Magnetoconductance measurements of charge build-up
4.3.3 Photoluminescence study of charge build-up
4.4 Enhancement of current hysteresis under magnetic fields
5 High-speed and functional applications of resonant tunnelling diodes
5.1 High-speed applications of RTDs
5.1.1 High-frequency signal generation with RTDs
5.1.2 High-speed switching and its application
5.2 Functional applications of RTDs
5.2.1 Static memory operation of RTDs and related devices
5.2.2 Multiple-well resonant tunnelling structures and multi- valued memories
5.2.3 Signal processing applications of RTDs and related devices
6 Resonant tunnelling in low-dimensional double-barrier heterostructures
6.1 Low-dimensional resonant tunnelling structures
6.2 Theory of zero-dimensional resonant tunnelling
6.2.1 Three-dimensional 5-matrix theory
6.2.2 Lateral-mode conserving and non-conserving resonant tunneling
6.3 Gated resonant tunnelling structures - squeezable quantum dots
6.3.1 Variable-area resonant tunnelling diodes
6.3.2 Three-dimensional confinement effects on tunnelling characteristics
6.3.3 Tunnelling through single-impurity states
6.4 One-dimensional (ID) resonant tunnelling diodes
6.5 Interplay of resonant tunnelling and Coulomb blockade 230
The Physics and Applications of Resonant Tunnelling Diodes
( Cambridge Studies in Semiconductor Physics and Microelectronic Engineering )
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