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Micro-nanoelectronics Devices: Modeling of Diffusion and Operation Processes

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Contents

Preface

Chapter 1. Introduction and Reminders

1.1. A brief history of microelectronics

1.2. Technological computer-aided design

1.3. Manufacturing

1.4. PN junction (an overview)

1.5. The transistor effect

1.6. MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

Chapter 2. Modeling of Diffusion Processes

2.1. Introduction

2.2. Phenomenological equations of diffusion

2.3. Calculation of flux and the internal electric field effect

2.4. Influence of different vacancies on the diffusion coefficient

2.5. Calculation of the electric field in the case of arsenic

2.6. An example: modeling the diffusion of dopants in polysilicon grains and joints

2.7. Microscopic processes

2.8. Phenomenological theory of diffusion

2.9. Review of the thermodynamics of irreversible processes

2.10. Conclusion

2.11. Appendix 1

2.12. Appendix 2

Chapter 3. Electrical Functioning of Devices

3.1. Introduction

3.2. Current state diagram

3.3. Wigner function

3.4. Electromagnetism; MOS: Maxwell equations

3.5. Substrate in tridimensional circuits at micro- and nanoelectronic levels

3.6. Conclusion

3.7. Appendix

3.8. Constants and data

3.9. Finite elements, under MATLAB (NPN)

Chapter 4. Background Noise in Micro- and Nanoelectronics

4.1. Introduction

4.2. Fluctuations and noise

4.3. Noise calculation using the Langevin method

4.4. Noise calculation using the impedance field method

4.5. Noise calculation using the transfer impedance method principle: formulation

4.6. Substrate noise: towards 3D

4.7. Appendix

4.8. Conclusion

Bibliography

Index

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