Chapter
I. Device Modeling and Applications
1 Tunnel FET: Devices and Circuits
1.3 Tunneling Field-Effect Transistors
1.3.1 Current–Voltage Characteristics
1.3.2 Capacitance–Voltage Characteristics
1.4.1 ON Current Performance Boosters
1.4.1.1 High-k gate dielectric
1.4.1.2 Area scaled devices
1.5 TFET Characteristics and Impact on the Circuit Design
1.5.1 Unidirectional Conduction
1.5.2 Enhanced ON-State Miller Capacitance
1.6 Tunnel FET SRAM Design
1.7 TFET Analog/RF Application
1.7.1 Transconductance Generation Factor (gm/IDS)
1.7.2 Linearity Performance
2 Electrothermal Characterization, TCAD Simulations, and Physical Modeling of Advanced SiGe HBTs
2.1 SiGe HBT Technologies and Their Thermal Issues
2.1.1 THz Waves and Applications
2.1.2 SiGe BiCMOS Technologies
2.1.3 Thermal Issues in SiGe HBT Technology Nodes
2.2 Device Characterization in SiGe HBT Technologies
2.2.1 Modeling of Device Self-heating in HiCuM
2.2.2 Self-heating Effect on the Device DC and AC Characteristics
2.2.3 Extraction of the Rth
2.2.4 Extraction of the Zth
2.2.4.1 Theoretical formulation
2.2.5 Recursive Thermal Network Models
2.2.6 Behavior of the Transistor Under Two Tones Excitation
2.3 Electrothermal Impact of the BEOL Metallization in SiGe HBTs
2.3.1 Electrothermal Characterization of Dedicated HBT Test Structures
2.3.1.1 DC electrical characterization
2.3.1.2 Thermal characterization
2.3.1.3 Small signal RF characterization
2.3.1.4 Large signal RF measurements
2.3.2 Compact Modeling of the BEOL Thermal Impact
2.3.2.1 Thermal modeling of the BEOL metallization
2.3.2.2 DC electrical characterization
2.3.2.3 Low-frequency measurements
2.3.2.4 Pulsed measurements
2.3.2.5 Large-signal two-tones simulations
2.3.3 Static and Dynamic 3D TCAD Thermal Simulations
2.3.3.1 Thermal parameters and doping dependence
2.3.3.2 Static thermal analysis and 3D simulations
2.3.3.3 Dynamic thermal analysis and 3D simulations
3 InP-Based High-Electron-Mobility Transistors for High-Frequency Applications
3.1 History and Background of HEMT
3.3.1 Two-Dimensional Electron Gas in HEMT
3.4 Materials and its Properties—(InP/GaAs)
3.5 General Structure of Inp HEMT
3.6 DC and Microwave Characteristics of HEMT
3.7 Drain Current Characteristics
3.8 Subthreshold and Gate Leakage Characteristics
3.9 Measurement of DC and RF Performance of the Device
3.10 Transconductance Characteristics
3.11 Drain Current Characteristics
3.12 Subthreshold and Gate Leakage Characteristics
4 Organic Transistor- Device Structure, Model and Applications
4.1 Organic Electronics: Low-Cost, Large-Area, and Flexible
4.2 Field-Effect Transistors Structure
4.3 Field-Effect Transistors Characterization
4.4 Organic Semiconductors Selection
4.5 Interfacial Engineering in Field-Effect Transistors
4.5.1 Changes in Surface Energy as a Result of SAM Treatment
4.5.2 Work Function Shift
5 Mitigating Read Disturbance Errors in STT-RAM Caches by Using Data Compression
5.2.1 Motivation for Using Nonvolatile Memories
5.2.3 Origin of Read Disturbance Error
5.2.4 Characteristics of Read Disturbance Error
5.2.5 Strategies for Addressing RDE
5.3 SHIELD: Key Idea and Architecture
5.3.1 Compression Algorithm
5.3.2 Defining Consecutive Reads
5.3.4 Action on Read and Write Operations
5.3.5 Overhead Assessment
5.4 Salient Features of SHIELD and Qualitative Comparison
5.5 Experimentation Platform
5.5.1 Simulator Parameters
5.5.3 Simulation Completion Strategy
5.5.4 Comparison with Related Schemes
5.6.2 Parameter Sensitivity Results
5.7 Conclusion and Future Work
6 Multi-Functionality of Spintronic Materials
6.1 Introduction—What Is Spintronics?
6.1.1 Spintronics Based on Multiferroics
6.1.2 Spintronics Based on DMSs
6.2 Methods of Synthesis of the Spintronic Materials
6.2.1 Synthesis of Multiferroics
6.2.1.2 Chemical combustion
6.2.1.3 Hydrothermal method
6.2.1.4 Metallo-organic decomposition synthesis
6.2.1.5 Spark plasma sintering
6.2.1.6 Conventional solid-state reaction
6.2.1.7 Pulsed laser deposition
6.2.1.8 Electrospray method
6.2.1.9 Sol-gel precipitation
6.2.2.1 Thermal evaporation method
6.2.2.2 Chemical vapor deposition
6.2.2.3 Sol-gel spin-coating technique
6.2.2.4 Spray pyrolysis technique
6.3 Spintronics Based on BTO Multiferroic Systems
6.3.1 Perovskite (ABO3) Multiferroics
6.3.2 Single-Phase Multiferroic BTO Systems
6.3.2.1 Structure and phase transition of doped BTO
6.3.2.1.1 X-ray diffraction of Ce-, La-substituted BaFe0.01Ti0.99O3 nanostructures
6.3.2.2 Induction of multiferroicity of the BTO with doping
6.3.2.2.1 TM impurity in BTO
6.3.2.2.2 Low doping level of Fe impurity ions in BTO influence multiferroicity
6.3.2.2.3 Tetragonal distortion by splitting/shifting of (200) XRD peak of BTO with TM ions
6.3.2.2.4 Rare earth ions impurity in multiferroic BTO
6.3.2.3 Multiferroic nanostructures
6.3.2.3.1 Zero-dimensional nanostructures
6.3.2.3.2 One-dimensional nanostructures
6.3.2.3.3 Two-dimensional nanostructures
6.3.2.3.4 Three-dimensional nanostructures
6.3.2.3.5 Grain-size-dependent ME coupling of BTO nanoparticles
6.3.2.3.6 Physical significance of BTO multiferroic nanostructures
6.3.2.4 Raman measurement of BTO: lattice structure, defects/vacancies evaluation
6.3.2.5 Magnetism in BTO with doping
6.3.2.5.1 Magnetic ordering near ferroelectric transition in BTO:Fe113 ppm system
6.3.2.6 Ferroelectricity in BTO with doping
6.3.2.6.1 Ferroelectricity induced by lone-pair electrons
6.3.2.6.2 Ferroelectricity due to charge ordering
6.3.2.6.3 Multiferroicity due to DM interaction
6.3.2.7 ME response due to an anomaly in phase transition temperatures
6.3.2.8 Magnetocapacitance
6.3.3 Multiferroic Composites
6.3.3.1 MFe2O4/BaTiO3 (M=Mn, Co, Ni, Zn) nanocomposites
6.3.3.2 Multiferroic NiFe2O4/BaTiO3 nanostructures
6.3.4 Multiferroic Thin Films
6.3.4.1 Nanostructural MFe2O4/BaTiO3 (M=Mn, Co, Ni, Zn) thin films
6.3.4.2 ME coupling due to magnetic control of ferroelectric polarization
6.3.4.3 Dynamic ME coupling measurement for MFe2O4/BaTiO3 thin films
6.4 Spintronics Based on Diluted Magnetic Semiconductor, DMS ZnO
6.4.1 TM Ions Impurity in DMS ZnO
6.4.2 RE Ions Impurity in DMS ZnO
6.4.3 Defects-Assisted Ferromagnetism Due to TM and RE Ions in ZnO
6.4.3.1 BMP in Co-substituted ZnO
6.4.4 First-Principle Calculations for RE and TM Ions in the Wurtzite ZnO Structure
6.4.5 Influence of Dopant Concentration (TM and RE ions) on Ferromagnetism of ZnO
6.4.6 Realizing Wurtzite Structure of ZnO With Dopant Ions
6.4.6.1 XRD studies of ZnO nanoparticles with La and Fe doping
6.4.6.2 Calculation for lattice constants and bond length of La-, Gd-, Co-doped ZnO
6.4.7 Nanostructural Formation in Pure and Doped DMS ZnO
6.4.7.1 Nanostructural growth of ZnO with Fe, Co, Ce substitution
6.4.8 Raman Spectra for Ni-, Cu-, Ce-Substituted ZnO Nanoparticles
6.4.9 Photoluminescence Spectra Evaluated Defects in Co:ZnO Nanoparticles
6.4.10 Magnetism in DMS ZnO
6.4.10.1 RTFM in Co, Fe, ZnO nanorods
6.4.10.2 Origin of RTFM in Ni:ZnO nanostructure
6.4.10.3 Lattice defects influenced ferromagnetic ordering of ZnO by Cu and Ce ions
6.4.10.4 The ac susceptibility SQUID measurement of Co,Fe,Ce:ZnO nanoparticles
6.4.10.5 Vacancies induce ferromagnetism of pure and doped ZnO
6.4.10.5.1 XPS spectra for Zn 2p, Co 2p and O 1s for Co:ZnO nanoparticles
6.4.10.5.2 Valence states of RE La, Gd ions influence ferromagnetism of ZnO nanoparticles
6.4.10.6 RTFM of DMS ZnO influenced with nanostructural formation
III. Optics and Photonics
7 Photonics Integrated Circuits
7.1 Introduction to Photonics
7.2.2 III-V Semiconductor Materials
7.2.5 Silicon-on-Insulator
7.4.2 Arrayed Waveguide Grating
7.4.3 Mach–Zehnder Interferometer
7.6 Photonics Integrated Circuits
7.6.2 Transmitter and Receiver
8 Graphene Based Optical Interconnects
8.2 Graphene: Structure and Electrical Properties
8.3 Graphene: Optical Properties
8.4 Waveguide-Integrated Graphene Devices: Fundamental Operation Principles
8.5 Waveguide-Integrated Graphene Devices: Recent Experimental Developments
8.6 Emerging Research Trends in Graphene-Based Optical Devices
9 Hot Carrier Generation in Plasmonic Nanostructures: Physics and Device Applications
9.2 The Physics of Hot Carrier Generation, Scattering, and Transport Processes
9.2.1 The Optical Properties of Plasmonic Nanoresonators
9.2.2 The Generation of Hot Carriers and Their Energy Distribution
9.2.3 Scattering and Lifetimes of Hot Carriers
9.2.4 Hot Carrier Injection Into Semiconductors
9.3 Applications of Hot Carrier Generation
9.3.2 Chemical Reactions Through Transfer of Charge Carriers
9.3.2.1 Mechanism of charge carrier transfer to adsorbed molecules
9.3.2.2 Examples of charge carrier-driven chemical reaction
10 Plasmonic Metamaterial-Based RF-THz Integrated Circuits: Design and Analysis
10.1.1 Surface Plasmon Polaritons
10.1.2 Spoof Surface Plasmon Polaritons
10.2 Unit Cell Design and Dispersion Analysis
10.2.1 Design and Analysis at Terahertz Frequency Regime
10.2.2 Design and Analysis at Microwave Frequency
10.2.3 Conversion and Momentum Matching (at Microwave, mm Wave and THz Frequencies)
10.3 Plasmonic Metamaterial-Based Transitions and RF-Microwave Components
10.3.3 Planar Ring Resonators
10.3.4 Spoof SPP-Fed Antenna Design
11 Advances in InSb and InAs Nanowire Based Nanoelectronic Field Effect Transistors
11.1.1 Search for Better Materials and Devices
11.1.2 InSb and InAs materials and their nanowires
11.2 InSb and InAs Nanowire Growth
11.3 InSb and InAs Materials and Their Nanowire Field-Effect Transistors
11.4 Diffusive Transport Model Within the Channel
11.4.1 Electrostatics and Channel Potential with Schottky Barrier at the Metal-nanowire Junctions
11.4.2 1D Transport and Landauer Formalism
11.5 InSb and InAs NW SB-FETs
11.7 Transport in NW Tunnel FETs
11.8 Emerging Non-CMOS Nanoelectronic Devices and Quantum Devices
11.9 Conclusion and Outlook
12 Carbon Nanotube and Nanowires for Future Semiconductor Devices Applications
12.2.1 Symmetry Structure of Nanotubes
12.2.2 Electronic Characteristics
12.2.3 The CNTFET Device Structures
12.2.3.1 Top-gated CNTFET
12.2.3.2 Back-gated CNTFET
12.2.3.3 Gate all-around CNTFET
12.2.3.4 Suspended CNTFET
12.4 Effect of Oxide Thickness on Gate Capacitance in Nanodevices
12.5 Effect of Device Parameters on Threshold Voltage in CNTFET Devices
12.5.1 Effect of Chiral Vector
12.5.2 Effect of Temperature
12.5.3 Effect of Metal Gate Work Function
12.5.4 Effect of High-K Dielectric
12.5.5 Effect of Channel Length
13 Role of Nanocomposites in Future Nanoelectronic Information Storage Devices
13.2 Classification of Nanomaterials
13.2.1 Origin Relevant Nanomaterials
13.2.2 Dimension Relevant Nanomaterials
13.2.3 Structural Configuration Relevant Nanomaterials
13.3 Trends and Future Applications
13.4 Nanocomposite: A Brief Overview
13.4.1 Ceramic–Matrix Nanocomposites
13.4.2 Metal–Matrix Nanocomposites
13.4.3 Polymer–Matrix Nanocomposites
13.5 Nanoelectronic: Information Storage Devices
13.5.1 Genesis of the Concept
13.5.2 Approaches of Information Storage Devices
13.5.2.1 Evaporation method
13.5.3 Fabrication of Information Storage Devices
13.5.3.1 Fabrication of nonvolatile information storage devices utilizing graphene materials embedded in a polymer matrix
13.5.3.2 Fabrication of nonvolatile information storage devices utilizing hybrid nanocomposites
13.5.4 Electrical Characteristics of the Hybrid Information Storage Devices
13.5.5 Switching and Carrier Transport Mechanism
13.5.5.1 Filament formation
13.5.5.2 Space-charge-limited current (SPLC)
13.5.5.3 Simmons and Verderder’s model
13.5.5.4 Electric field induced charge transfer
13.6 Outcomes and Conclusive Aspect
Nanoelectronics
：Devices, Circuits and Systems
( Micro and Nano Technologies )
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