Related content

Electronic structure of (Ga,Mn)As as seen by synchrotron radiation

By  

Semiconductor Science and Technology, Vol. 30, Iss. 4, 2015-01 ,pp. : 43001-43017

IOP Publishing

Access to resources Recommend Favorite

Impurity incorporation in semipolar (1-1 0 1) GaN grown on an Si substrate

By Sawaki Nobuhiko   Hagiwara Kiyotaka   Hikosaka Toshiki   Honda Yoshio  

Semiconductor Science and Technology, Vol. 27, Iss. 2, 2012-02 ,pp. : 24006-24010

IOP Publishing

Access to resources Recommend Favorite

X-ray diffraction studies of Al x Ga 1-x N (0= x =1) ternary alloys grown on sapphire substrate

By Shiong Ng Sha   Guan Ching Chin   Hassan Zainuriah   Hassan Haslan Abu  

Microelectronics International, Vol. 28, Iss. 2, 2011-05 ,pp. : 44-48

Emerald Group Publishing Ltd

Access to resources Recommend Favorite

Second-order magnetization precession in an anisotropic medium. Part 1: Uniaxial anisotropy

By Vlasov V.   Kirushev M.   Kotov L.   Shavrov V.   Shcheglov V.  

Journal of Communications Technology and Electronics, Vol. 58, Iss. 8, 2013-08 ,pp. : 806-820

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

SOME INVESTIGATIONS ON THE ANISOTROPY OF THE CHEMICAL ETCHING OF (h k 0) AND (h h l) SILICON PLATES IN A NaOH 35% SOLUTION. PART III: DETERMINATION OF A DATABASE FOR THE SIMULATOR TENSOSIM AND PREDICTION OF 2D ETCHING SHAPES

By TELLIER C. R.  

Active and Passive Electronic Components, Vol. 26, Iss. 2, 2003-06 ,pp. : 95-109

Taylor & Francis Ltd

Access to resources Recommend Favorite