Related content

Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots

By Reyes D F   Ulloa J M   Guzman A   Hierro A   Sales D L   Beanland R   Sanchez A M   González D  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 114006-114014

IOP Publishing

Access to resources Recommend Favorite

Dependence of quantum dot photocurrent on the carrier escape nature in InAs/GaAs quantum dot solar cells

By Cedola Ariel   Cappelluti Federica   Gioannini Mariangela  

Semiconductor Science and Technology, Vol. 31, Iss. 2, 2016-02 ,pp. : 25018-25029

IOP Publishing

Access to resources Recommend Favorite

Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots

By  

Semiconductor Science and Technology, Vol. 30, Iss. 3, 2015-03 ,pp. : 35006-35011

IOP Publishing

Access to resources Recommend Favorite

High power laser diodes of 2 μm AlGaAsSb/InGaSb type I quantum-wells

By Yongping Liao   Yu Zhang   Junliang Xing   Sihang Wei   Hongyue Hao   Guowei Wang   Yingqiang Xu   Zhichuan Niu  

Journal of Semiconductors, Vol. 36, Iss. 5, 2015-05 ,pp. : 54007-54010

IOP Publishing

Access to resources Recommend Favorite

Carrier Doping in the Type VIII Clathrate Ba 8 Ga 16 Sn 30 Through Sb Substitution

By Kono Yasushi  

Journal of Electronic Materials, Vol. 40, Iss. 5, 2011-05 ,pp. : 845-850

Springer Publishing Company

Access to resources Recommend Favorite