Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots

Author： Yahyaoui M Sellami K Radhia S Ben Boujdaria K Chamarro M Eble B Testelin C Lemaître A

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.29, Iss.7, 2014-07, pp. : 75013-75023

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