GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates

Author: Tompkins R.   Smith J.   Kirchner K.   Jones K.   Leach J.   Udwary K.   Preble E.   Suvarna P.   Leathersich J.M.   Shahedipour-Sandvik F.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.43, Iss.4, 2014-04, pp. : 850-856

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