Effect of annealing temperature on the electrical properties of Au/Ta₂O₅/n-GaN metal–insulator–semiconductor (MIS) structure

Author： Prasanna Lakshmi B. Rajagopal Reddy V. Janardhanam V. Siva Pratap Reddy M. Lee Jung-Hee

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.113, Iss.3, 2013-11, pp. : 713-722

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