Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD

Author： Öztürk M.   Çörekçi S.   Tamer M.   Çetin S.   Özçelik S.   Özbay E.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.114, Iss.4, 2014-03, pp. : 1215-1221

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