Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

E-ISSN： 1862-6270|9|8|466-469

ISSN： 1862-6254

Source： PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol.9, Iss.8, 2015-08, pp. : 466-469

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Orientations of ZnO grown on GaN(10 1̄1)

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 9, Iss. 1, 2015-01 ,pp. : 92-94

John Wiley & Sons Inc

Access to resources Recommend Favorite

Cathodoluminescence study of optical properties along the growth direction of ZnO films on GaN substrate

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 12, Iss. 8, 2015-08 ,pp. : 1129-1131

John Wiley & Sons Inc

Access to resources Recommend Favorite

Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

By Miraglia P.Q. Preble E.A. Roskowski A.M. Einfeldt S. Lim S.H. Liliental-Weber Z. Davis R.F.

Thin Solid Films, Vol. 437, Iss. 1, 2003-08 ,pp. : 140-149

Elsevier

Access to resources Recommend Favorite

GaN and InN nanowires grown by MBE: A comparison

By Calarco R. Marso M.

Applied Physics A, Vol. 87, Iss. 3, 2007-06 ,pp. : 499-503

Springer Publishing Company

Access to resources Recommend Favorite

Dislocation core structures in GaN grown on Si(111) substrate

By Wang D. Ichikawa M. S.Yoshida S.

Philosophical Magazine Letters, Vol. 82, Iss. 3, 2002-03 ,pp. : 119-124

Taylor & Francis Ltd

Access to resources Recommend Favorite