Improved hole distribution in InGaN light‐emitting diodes with InGaN–GaN barriers of decreasing indium composition

Publisher: John Wiley & Sons Inc

E-ISSN: 1862-6319|212|8|1805-1809

ISSN: 1862-6300

Source: PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.8, 2015-08, pp. : 1805-1809

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Abstract