Atomic Layer Deposition of GeO2 Thin Films on Si(100) using Ge(N,NꞋ‐R,R‐en)(NMe2)2 (Where R = Isopropyl and t‐Butyl) Precursors

Publisher： John Wiley & Sons Inc

E-ISSN： 1229-5949|36|8|1953-1954

ISSN： 1229-5949

Source： BULLETIN OF THE KOREAN CHEMICAL SOCIETY (ELECTRONIC), Vol.36, Iss.8, 2015-08, pp. : 1953-1954

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