Publisher: John Wiley & Sons Inc
E-ISSN: 1098-2760|57|9|2020-2023
ISSN: 0895-2477
Source: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol.57, Iss.9, 2015-09, pp. : 2020-2023
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
ABSTRACTThe influence of the gate‐drain distance on high frequency and noise performance of AlGaN/GaN high electron mobility transistors (HEMT) is investigated in this article. AlGaN/GaN HEMTs with three different gate‐drain separation structures are fabricated using 0.25 μm gatelength process, and a detailed comparative study on their device performances is performed. Small signal model parameters are determined from S‐parameter on‐wafer measurement up to 40 GHz, and the noise parameters are determined up to 18 GHz based on 50 Ω noise figure on‐wafer measurement system. The variation of intrinsic small signal model parameters and noise model parameters with different gate‐drain separation is studied. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:2020–2023, 2015
Related content
Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications
Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. :