The effect of the gate‐drain distance on high frequency and noise performance for AlGaN/GaN HEMT

E-ISSN： 1098-2760|57|9|2020-2023

ISSN： 0895-2477

Source： MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol.57, Iss.9, 2015-09, pp. : 2020-2023

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