High‐Performance, Air‐Stable, Top‐Gate, p‐Channel WSe2 Field‐Effect Transistor with Fluoropolymer Buffer Layer
Publisher: John Wiley & Sons Inc
E-ISSN: 1616-3028|25|46|7208-7214
ISSN: 1616-301x
Source: ADVANCED FUNCTIONAL MATERIALS, Vol.25, Iss.46, 2015-12, pp. : 7208-7214
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Abstract