Anti-Stokes luminescence in nitrogen doped GaAs1−xPx alloys*

Author： Meftah A.   Oueslati M.   Scalbert D.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|1|1|35-38

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.1, Iss.1, 2010-03, pp. : 35-38

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Photoluminescence study of nitrogen effects on confined states in GaAs1−xNxGaAs quantum wells

By Dhifallah I.   Aloulou S.   Bardaoui A.   Harmand J. C.   Chtourou R.  

EPJ Applied Physics (The), Vol. 47, Iss. 3, 2009-06 ,pp. : 30302-30302

Edp Sciences

Access to resources Recommend Favorite

Nonequilibrium carrier dynamics in heavily p-doped GaAs

By Jarasiunas K.   Aleksiejunas R.   Malinauskas T.   Gudelis V.   Sudzius M.   Maaßdorf A.   Brunner F.   Weyers M.  

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 181-184

Edp Sciences

Access to resources Recommend Favorite

Subband structure of p-type δ-doped GaAs as dependent on the acceptor concentration and the layer thickness

By Ozturk E.   Bahar M. K.   Sokmen I.  

EPJ Applied Physics (The), Vol. 41, Iss. 3, 2008-03 ,pp. : 195-200

Edp Sciences

Access to resources Recommend Favorite

Modeling of the spectral response of AlxGa1−xN p-n junctionphotodetectors

By Hanzaz M.   Bouhdada A.   Monroy E.   Muñoz E.   Gibart P.   Omnès F.  

EPJ Applied Physics (The), Vol. 11, Iss. 1, 2010-03 ,pp. : 29-34

Edp Sciences

Access to resources Recommend Favorite

A GaAs MMIC-based X-band Dual Channel Microwave Phase Detector based on MEMS Microwave Power Sensors

By Hua Di  

MATEC Web of conference, Vol. 54, Iss. issue, 2016-04 ,pp. : 12001-12001

Edp Sciences

Access to resources Recommend Favorite