Solid source molecular beam epitaxial growth of In0.48Ga0.52P on GaAs substrates using a valved phosphorus cracker cell

Author： Yoon S. F.   Mah K. W.   Zheng H. Q.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|7|2|111-117

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.7, Iss.2, 2010-03, pp. : 111-117

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