Study of indium phosphide wafers treated by long time annealing at high temperatures

E-ISSN： 1286-0050|27|1-3|197-200

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 197-200

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Characterization and Ultrafiltration of Semiconductor Indium Phosphide (InP) Wastewater for Recycling

By Wu M. Sun D.D. Tay J.H.

Environmental Technology, Vol. 26, Iss. 1, 2005-01 ,pp. : 111-119

Taylor & Francis Ltd

Access to resources Recommend Favorite

Synthesis of indium phosphide nanocrystals by sonochemical method and survey of optical properties*

By Trung Ho Minh Thien Nguyen Duy Van Vu Le Long Nguyen Ngoc Hieu Truong Kim

EPJ Applied Physics (The), Vol. 64, Iss. 1, 2013-10 ,pp. : 10402-10402

Edp Sciences

Access to resources Recommend Favorite

Dynamic Embrittlement — Time–dependent Quasi–brittle Intergranular Fracture at High Temperatures

By Krupp U.

International Materials Reviews, Vol. 50, Iss. 2, 2005-03 ,pp. : 83-97

Maney Publishing

Access to resources Recommend Favorite

Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high pressure annealing

By Jung W. Kaniewska M. Misiuk A. Londos C. A.

EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. : 115-118

Edp Sciences

Access to resources Recommend Favorite

Deformation At High Temperatures

By Mclean D.

International Materials Reviews, Vol. 7, Iss. 1, 1962-01 ,pp. : 481-527

Maney Publishing

Access to resources Recommend Favorite