Microscopic defects and homogeneity investigations in 4H-SiC epitaxial wafers by UV scanning photoluminescence spectroscopy

Author: El Harrouni I.   Bluet J.-M.   Ziane D.   Sartel C.   Guillot G.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|235-238

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 235-238

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Abstract