Electronic properties of two coupled Si δ-doped GaAs structures

By Ozturk E.   Sari H.   Ergun Y.   Sokmen I.  

EPJ Applied Physics (The), Vol. 21, Iss. 2, 2002-11 ,pp. : 91-95

Edp Sciences

Access to resources Recommend Favorite

Influence of an applied electric field on the electronic properties of Si δ-doped GaAs

By Ozturk E.   Ergun Y.   Sari H.   Sokmen I.  

EPJ Applied Physics (The), Vol. 24, Iss. 3, 2003-10 ,pp. : 189-194

Edp Sciences

Access to resources Recommend Favorite

Intersubband optical absorption in Si δ-doped GaAs for the donor distribution and thickness as dependent on the applied electric field

By Ozturk E.   Sokmen I.  

EPJ Applied Physics (The), Vol. 25, Iss. 1, 2003-11 ,pp. : 3-9

Edp Sciences

Access to resources Recommend Favorite

Subband structure of p-type δ-doped GaAs as dependent on the acceptor concentration and the layer thickness

By Ozturk E.   Bahar M. K.   Sokmen I.  

EPJ Applied Physics (The), Vol. 41, Iss. 3, 2008-03 ,pp. : 195-200

Edp Sciences

Access to resources Recommend Favorite

Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe)

By Mahi N.  

EPJ Web of Conference, Vol. 29, Iss. issue, 2012-06 ,pp. : 00027-00027

Edp Sciences

Access to resources Recommend Favorite