Experimental validation of the “FLoating Island” concept: realization of low on-resistance FLYMOS™ transistors

Author: Alves S.   Morancho F.   Reynès J-M.   Margheritta J.   Deram I.   Isoird K.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|32|1|7-13

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.32, Iss.1, 2005-09, pp. : 7-13

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract