Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method*

Author: Poncet A.   Faugeras C.   Mouis M.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|15|2|117-121

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.15, Iss.2, 2010-03, pp. : 117-121

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Abstract