Quantitative spectroscopic strain analysis of AlGaAs-based high-power diode laser devices

Author: Tomm J. W.   Gerhardt A.   Biermann M. L.   Holland J. P.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|461-464

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 461-464

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract