Formation of anti-site defects and bismuth overstoichiometry in p-type Sb_2−xBi_xTe₃ thermoelectric crystals

E-ISSN： 1286-0050|42|2|67-73

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.42, Iss.2, 2008-03, pp. : 67-73

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