A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfet

Author： Grado-Caffaro M. A.   Grado-Caffaro M.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|5|1|1-2

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.5, Iss.1, 2010-03, pp. : 1-2

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