Temperature-dependent current-voltage characteristics in thermally annealed ferromagnetic Co/n-GaN Schottky contacts

By Ejderha Kadir   Yıldırm N.   Turut A.  

EPJ Applied Physics (The), Vol. 68, Iss. 2, 2014-10 ,pp. : 20101-20101

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The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters

By Özdemir A.F.   Özsoy T.   Kansız Y.   Sancak M.   Kökce A.   Uçar N.   Aldemir D.A.  

EPJ Applied Physics (The), Vol. 60, Iss. 1, 2012-10 ,pp. : 10101-10101

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Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode

By Rabehi Abdelaziz   Amrani Mohamed   Benamara Zineb   Akkal Boudali   Hatem-Kacha Arslane   Robert-Goumet Christine   Monier Guillaume   Gruzza Bernard  

EPJ Applied Physics (The), Vol. 72, Iss. 1, 2015-09 ,pp. : 10102-10102

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Temperature-dependent Schottky barrier inhomogeneity of Ni/n-GaAs diodes

By Yildirim N.   Korkut H.   Türüt A.  

EPJ Applied Physics (The), Vol. 45, Iss. 1, 2009-01 ,pp. : 10302-10302

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Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

By Gassoumi M.   Saadaoui S.   Ben Salem M.M.   Gaquiere C.   Maaref H.  

EPJ Applied Physics (The), Vol. 55, Iss. 3, 2011-08 ,pp. : 30101-30101

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