Modelling of parasitic effects induced by electrically active defects in a SiGe HBT

Author： Lakhdara M.   Latreche S.   Gontrand C.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|43|1|55-63

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.43, Iss.1, 2008-06, pp. : 55-63

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