Front Cover

Half title page

RIVER PUBLISHERS SERIES IN OPTICS AND PHOTONICS

Title Page - Green Photonicsand Smart Photonics

Copyright Page

Contents

Preface

List of Contributors

List of Figures

List of Tables

List of Abbreviations

Introduction

Chapter 1 - Thermal Field Study of Multichip LED Module

1.1 Introduction

1.1.1 Background of LED

1.1.2 Literatures

1.2 Structure and Properties of LED Package

1.3 Theoretical Studies

1.3.1 Heat Transfer

1.3.2 Thermal Resistance

1.4 Simulation

1.5 General Results on Thermal Field Analysis

1.5.1 In Terms of K Factor

1.5.2 In Terms of Cooling Curve

1.5.3 In Terms of Structure Functions

1.5.4 In Terms of Estimated Junction Temperature

References

Chapter 2 - Modeling and Simulation of Ge/Si-Nanodisk Array for QD-based IB Solar Cells

2.1 Introduction

2.2 Fabrication of Ge/Si-Nanodisk

2.3 The Computational Model

2.3.1 Calculation of Electronic Band Structures

2.3.2 Calculation of DoSs

2.3.3 IBSC Model

2.4 1D Superlattice

2.5 In-Plane Ge/Si QDs Superlattice

2.5.1 Electronic Band Structure

2.5.2 Density of States

2.5.3 QDs IB SC

2.6 Conclusions

References

Chapter 3 - Sputtering Epitaxy of Si and Ge for Application to Solar Cells

3.1 Introduction

3.2 SE of Si and Ge

3.3 Characteristics of Si and Ge Films

3.4 Conductivity Control of Epitaxial Ge and Si Films

3.5 SC Characteristics

3.6 Conclusion

References

Chapter 4 - Non-Stoichiometric SiC-based Solar Cells

4.1 Introduction

4.2 All Non-Stoichiometric SixC1−x-based p–n Junction SCs

4.2.1 The Synthesis of the Non-Stoichiometric SixC1−x-based p–n Junction SC

4.2.2 The XPS Analysis of Non-Stoichiometric SixC1−x Film

4.2.3 The Optical Absorption Analysis of the Non-Stoichiometric SixC1−x Film

4.2.4 The PC Simulation of the Non-Stoichiometric SixC1−x-based p–n Junction SC

4.2.5 The Performance of the Non-Stoichiometric SixC1−x-based p–n Junction SC

4.3 All Non-Stoichiometric SixC1−x-based p–i–n Junction SC

4.3.1 The Synthesis of the Non-Stoichiometric SixC1−x-based p–i–n Junction SC

4.3.2 Optimizing the Resistivity of n-Type and p-Type Non-Stoichiometric SixC1−x Films by Detuningthe PH3- and B2H6-Doping Fluence Ratioin Reactant Gas Recipe

4.3.3 The Performance of the Non-Stoichiometric SixC1−x-based p–i–n Junction SC

4.4 All Non-Stoichiometric SixC1−x-based p–i–n Junction SCs with Lower C/Si Composition Ratio Grown Intrinsic SixC1−x Layer

4.4.1 The Fabrication of the Non-Stoichiometric SixC1−x-based p–i–n Junction SC

4.4.2 The XPS Analysis on the Composition of the Non-Stoichiometric SixC1−x Films

4.4.3 The Optical Absorption Analysis and PC Simulationof the Non-Stoichiometric SixC1−x Films

4.4.4 The Performance of Non-Stoichiometric SixC1−x-based SCs

4.5 Conclusion

References

Chapter 5 - Water Splitting Using GaN-based Working Electrodes for Hydrogen Generation with Bias by Solar Cells

5.1 Introduction

5.2 Experiments

5.3 Results and Discussions

5.4 Conclusion

References

Chapter 6 - Fiber Amplifiers for Photonic Communication and Sensing

6.1 Introduction

6.2 Experimental Setup

6.2.1 Bidirectional EDFA

6.2.2 Raman Fiber Amplifier

6.2.3 Bidirectional Hybrid Fiber Amplifier

6.2.4 High-Power Erbium Ytterbium Co-Doped Fiber Amplifier (EYDFA)

6.3 Results and Discussion

6.3.1 Bidirectional EDFA

6.3.2 Raman Fiber Amplifier

6.3.3 Bidirectional Hybrid Fiber Amplifier

6.3.4 High-Power EYDF Amplifier

6.4 Conclusion

References

Chapter 7 - High-Sensitivity Pressure, DP, and Random Rotational Angle Fiber Sensors

7.1 Fiber Grating Characterization and Fabrication

7.2 The Lateral Pressure Sensors based on Fiber Gratings

7.2.1 Basic Operation Principle

7.2.2 Experimental Results

7.3 The DP Sensors based on Fiber Gratings

7.3.1 Basic Principle

7.3.2 Experimental Results

7.4 The Rotational Angle Sensors based on Fiber Gratings

7.4.1 Basic Operating Principle

7.4.2 Experimental Results

7.5 Conclusion

References

Chapter 8 - Heterogeneous Integration of Group IV Semiconductors on Si by RMG Method for Implementing High-Speed Optoelectronic Devices

8.1 Introduction

8.2 Germanium MSM Photodetectors

8.3 Self-Assembled Microbonded Ge/Si Heterogeneous Structure

8.3.1 Self-Assembled Microbonded Ge on Si by Surface Tension

8.3.2 Device Schematics and Fabrication

8.3.3 Results and Discussion

8.4 Self-Aligned Butt-Coupling of Ge and SiWaveguide

8.4.1 Device Schematics and Fabrication

8.4.2 Optical Simulation on Coupling Efficiency

8.4.3 Measurement Result and Discussion

8.5 Germanium-Tin (GeSn) Photodetectors

8.5.1 Device Schematics and Fabrication

8.5.2 Experimental Results

8.6 Conclusion

References

Chapter 9 - SiC Smart Photonic Waveguide Device for Data Processing

9.1 Introduction

9.1.1 Historical Review of SiC-based Optoelectronic Devices

9.1.2 Historical Review of Si-based All-Optical Switching with the Advantages of SiC-based Non-Linear Waveguide Applications

9.1.3 Motivation and Chapter Content

9.2 Structural Properties of Amorphous Si-Rich SiC

9.2.1 Composition of Amorphous Si-Rich SiC

9.2.2 Optical Non-Linearity of Amorphous Si-Rich SiC

9.3 All Optical Switching in Si-QD-Doped in a-SiC Micro-Ring Resonator

9.3.1 Fabrication of Si-QD-Doped in a-SiC Micro-Ring Resonator

9.3.2 Operation of SiC Ring Resonator

9.4 Conclusion

References

Chapter 10 - Application of Ion BeamTechnology in the Synthesis of ZnO Nanostructures

10.1 Introduction

10.2 Capillaritron Ion Source

10.3 ZnO Nanostructures

10.4 Synthesis of ZnO Nanostructures UtilizingI on Beam Processing

10.5 Experiment and Results

10.5.1 Ion Beam Synthesis of Zn Nanoneedles

10.5.2 ZnO QDs on Ion Beam Textured Si Substrates

10.5.3 ZnO Nanowire by Thermal Oxidation of Metallic Zinc

10.5.3.1 Zn foil with ion implantation

10.5.3.2 Zn films deposited by ion beam sputter deposition

10.5.3.3 Zn films deposited by RF magnetron sputtering

10.5.3.4 Zn films deposited by thermal evaporation

10.6 Conclusions

References

Index

About the Editors

Back Cover